Deep Level Assessment of n-Type Si/SiO2Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
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چکیده
منابع مشابه
Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that ...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2018
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.0031802jss